Datasheet BSH108,215 - NXP MOSFET, N CH, 30 V, 1.9 A, 3-SOT-23 — Datenblatt

Detaillierte Beschreibung

Manufacturer: NXP

Description: MOSFET, N CH, 30 V, 1.9 A, 3-SOT-23

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Docket:
BSH108
N-channel enhancement mode field-effect transistor
Rev.

02 -- 25 October 2000
M3D088
Product specification

Specifications:

• Continuous Drain Current Id: 1.9 A
• Drain Source Voltage Vds: 30 V
• On Resistance Rds(on): 77 MOhm
• Rds(on) Test Voltage Vgs: 10 V
• Threshold Voltage Vgs Typ: 1.5 V
• Transistor Polarity: N Channel
• RoHS: Yes

Andere Namen:

BSH108215, BSH108 215