Datasheet IXUC120N10 - IXYS MOSFET, N, ISOPLUS220 — Datenblatt

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Manufacturer: IXYS

Description: MOSFET, N, ISOPLUS220

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Docket:
ADVANCE TECHNICAL INFORMATION
Trench Power MOSFET IXUC 120N10
ISOPLUS220TM
Electrically Isolated Back Surface
VDSS = 100 V ID25 = 120 A RDS(on) = 9.5 m

Specifications:

• Continuous Drain Current Id: 120 A
• Drain Source Voltage Vds: 100 V
• Isolation Voltage: 2.5 kV
• Mounting Type: Through Hole
• N-channel Gate Charge: 36nC
• On State Resistance: 9.5 MOhm
• Package / Case: ISOPLUS-220
• Power Dissipation Pd: 300 W
• Reverse Recovery Time trr Max: 80 ns
• Rth: 0.5
• Threshold Voltage Vgs Typ: 4 V
• Transistor Case Style: ISOPLUS-220
• Transistor Polarity: N Channel
• Voltage Vds Typ: 100 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes