Datasheet IXFT96N20P - IXYS MOSFET, N, TO-268 — Datenblatt

Detaillierte Beschreibung

Manufacturer: IXYS

Description: MOSFET, N, TO-268

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Docket:
PolarHTTM HiPerFET Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFH 96N20P IXFT 96N20P IXFV 96N20P
VDSS ID25
RDS(on) trr

Specifications:

• Capacitance Ciss Typ: 4800 pF
• Continuous Drain Current Id: 96 A
• Current Id Max: 96 A
• Drain Source Voltage Vds: 200 V
• Junction to Case Thermal Resistance A: 0.25°C/W
• Mounting Type: SMD
• N-channel Gate Charge: 145nC
• Number of Pins: 3
• On State Resistance: 24 MOhm
• Operating Temperature Range: -55°C to +175°C
• Package / Case: TO-268
• Power Dissipation Pd: 600 W
• Rds(on) Test Voltage Vgs: 10 V
• Reverse Recovery Time trr Max: 200 ns
• Threshold Voltage Vgs Typ: 5 V
• Transistor Case Style: TO-268
• Transistor Polarity: N Channel
• Voltage Vds Typ: 200 V
• Voltage Vgs Max: 20 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

Accessories:

• Panasonic - EYGA091203SM
• Panasonic - EYGA121807A