Datasheet IXFV18N60PS - IXYS MOSFET, N, SMD, PLUS220 — Datenblatt

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Manufacturer: IXYS

Description: MOSFET, N, SMD, PLUS220

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Docket:
PolarHVTM HiPerFET Power MOSFET
N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated
IXFH 18N60P IXFV 18N60P IXFV 18N60PS
VDSS
ID25

Specifications:

• Capacitance Ciss Typ: 2500 pF
• Continuous Drain Current Id: 18 A
• Drain Source Voltage Vds: 600 V
• Junction to Case Thermal Resistance A: 0.35°C/W
• Mounting Type: SMD
• N-channel Gate Charge: 50nC
• Number of Pins: 3
• On State Resistance: 400 MOhm
• Package / Case: PLUS220
• Power Dissipation Pd: 360 W
• Reverse Recovery Time trr Max: 200 ns
• Threshold Voltage Vgs Typ: 5.5 V
• Transistor Case Style: PLUS220
• Transistor Polarity: N Channel
• Transistor Type: High Performance (HiPerFET)
• Voltage Vds Typ: 600 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes