Datasheet IXFV110N10PS - IXYS MOSFET, N, SMD, PLUS220 — Datenblatt

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Manufacturer: IXYS

Description: MOSFET, N, SMD, PLUS220

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Docket:
PolarHTTM HiPerFET Power MOSFET
N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated
IXFH 110N10P IXFV 110N10P IXFV 110N10PS
VDSS = 100 V ID25 = 110 A RDS(on) 15 m trr 150 ns
Symbol VDSS VDGR VGSS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md FC Weight

Specifications:

• Capacitance Ciss Typ: 3550 pF
• Continuous Drain Current Id: 110 A
• Drain Source Voltage Vds: 100 V
• Junction to Case Thermal Resistance A: 0.31°C/W
• Mounting Type: SMD
• N-channel Gate Charge: 110nC
• Number of Pins: 3
• On State Resistance: 15 MOhm
• Package / Case: PLUS220
• Power Dissipation Pd: 480 W
• Reverse Recovery Time trr Max: 150 ns
• Threshold Voltage Vgs Typ: 5 V
• Transistor Case Style: PLUS220
• Transistor Polarity: N Channel
• Transistor Type: High Performance (HiPerFET)
• Voltage Vds Typ: 100 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes