Datasheet IXFK170N10P - IXYS MOSFET, N, TO-264 — Datenblatt

Detaillierte Beschreibung

Manufacturer: IXYS

Description: MOSFET, N, TO-264

Specifications:

• Capacitance Ciss Typ: 6000 pF
• Continuous Drain Current Id: 170 A
• Drain Source Voltage Vds: 100 V
• Junction to Case Thermal Resistance A: 0.21°C/W
• Mounting Type: Through Hole
• N-channel Gate Charge: 198nC
• Number of Pins: 3
• On State Resistance: 9 MOhm
• Package / Case: TO-264
• Power Dissipation Pd: 714 W
• Reverse Recovery Time trr Max: 150 ns
• Threshold Voltage Vgs Typ: 5 V
• Transistor Case Style: TO-264
• Transistor Polarity: N Channel
• Transistor Type: High Performance (HiPerFET)
• Voltage Vds Typ: 100 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes