Datasheet IXFC96N15P - IXYS MOSFET, N, ISOPLUS220 — Datenblatt

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Manufacturer: IXYS

Description: MOSFET, N, ISOPLUS220

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Docket:
PolarHTTM HiPerFET Power MOSFET ISOPLUS220TM
(Electrically Isolated Back Surface)
IXFC 96N15P
VDSS = 150 V ID25 = 42 A RDS(on) = 26 m < 200 ns trr
N-Channel Enhancement Mode Fast Recovery Diode, Avalanche Rated

Specifications:

• Capacitance Ciss Typ: 3500 pF
• Continuous Drain Current Id: 42 A
• Drain Source Voltage Vds: 150 V
• Isolation Voltage: 2.5 kV
• Mounting Type: Through Hole
• N-channel Gate Charge: 110nC
• On State Resistance: 26 MOhm
• Package / Case: ISOPLUS-220
• Power Dissipation Pd: 120 W
• Reverse Recovery Time trr Max: 200 ns
• Rth: 1.25
• Threshold Voltage Vgs Typ: 5 V
• Transistor Case Style: ISOPLUS-220
• Transistor Polarity: N Channel
• Voltage Vds Typ: 150 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes