Datasheet IXFC110N10P - IXYS MOSFET, N, ISOPLUS220 — Datenblatt

Detaillierte Beschreibung

Manufacturer: IXYS

Description: MOSFET, N, ISOPLUS220

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Docket:
PolarHVTM HiPerFET Power MOSFET ISOPLUS220TM
(Electrically Isolated Back Surface)
IXFC 110N10P
VDSS = 100 V ID25 = 60 A RDS(on) 17 m trr 150 ns
N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated

Specifications:

• Capacitance Ciss Typ: 3550 pF
• Continuous Drain Current Id: 60 A
• Drain Source Voltage Vds: 100 V
• Isolation Voltage: 2.5 kV
• Mounting Type: Through Hole
• N-channel Gate Charge: 110nC
• On State Resistance: 17 MOhm
• Package / Case: ISOPLUS-220
• Power Dissipation Pd: 120 W
• Reverse Recovery Time trr Max: 150 ns
• Rth: 1.25
• Threshold Voltage Vgs Typ: 5 V
• Transistor Case Style: ISOPLUS-220
• Transistor Polarity: N Channel
• Voltage Vds Typ: 100 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

Accessories:

• Panasonic - EYGA091203SM
• Panasonic - EYGA121807A