Datasheet NTE2399 - NTE Electronics N CHANNEL MOSFET, 1 kV, 3.1 A, TO-220 — Datenblatt

Detaillierte Beschreibung

Manufacturer: NTE Electronics

Description: N CHANNEL MOSFET, 1 kV, 3.1 A, TO-220

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Docket:
NTE2399 MOSFET N­Ch, Enhancement Mode High Speed Switch
Features: D Dynamic dv/dt Rating D Repetitive Avalanche Rated D Fast Switching D Ease of Paralleling D Simple Drive Requirements Absolute Maximum Ratings: Continuous Drain Current (VGS = 10V), ID TC = +25°C .

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.1A TC = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0A Pulsed Drain Current (Note 1), IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125W Derate Linearly Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W/°C Gate­to­Source Voltage, VGS . . . . . . . . . . . . .

Specifications:

• Continuous Drain Current Id: 3.1 A
• Drain Source Voltage Vds: 1 kV
• On Resistance Rds(on): 0.5 Ohm
• Rds(on) Test Voltage, Vgs: 10 V
• Threshold Voltage, Vgs Typ: 4 V
• Transistor Polarity: N Channel

RoHS: Yes

Accessories:

• WAKEFIELD SOLUTIONS - 273-AB