Datasheet NTE2380 - NTE Electronics N CHANNEL MOSFET, 500 V, 2.5 A TO-220 — Datenblatt
Part Number: NTE2380
Detaillierte Beschreibung
Manufacturer: NTE Electronics
Description: N CHANNEL MOSFET, 500 V, 2.5 A TO-220
Docket:
NTE2380 (NCh) & NTE2381 (PCh) Complementary Silicon Gate MOSFETs Enhancement Mode, High Speed Switch
Description: The NTE2380 (NCh) and NTE2381 (PCh) are complementary TMOS power FETs in a TO220 type package designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid, and relay drivers.
Features: D Silicon Gate for Fast Switching Speeds D Rugged SOA is Power Dissipation Limited D SourcetoDrain Diode Characterized for Use With Inductive Loads Absolute Maximim Ratings: DrainSource Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V DrainGate Voltage (RGS = 1M), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V GateSource Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20V Drain Current, ID Continuous NTE2380 . . .
Specifications:
- Continuous Drain Current Id: 2.5 A
- Drain Source Voltage Vds: 500 V
- On Resistance Rds(on): 3 Ohm
- Rds(on) Test Voltage Vgs: 10 V
- Threshold Voltage Vgs Typ: 4 V
- Transistor Polarity: N Channel
RoHS: Yes
Accessories:
- WAKEFIELD SOLUTIONS - 273-AB