Datasheet NTE2373 - NTE Electronics P CHANNEL MOSFET, -200 V, 11 A TO-220 — Datenblatt

Detaillierte Beschreibung

Manufacturer: NTE Electronics

Description: P CHANNEL MOSFET, -200 V, 11 A TO-220

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Docket:
NTE2373 MOSFET P­Ch, Enhancement Mode High Speed Switch
Features: D Dynamic dv/dt Rating D Repetitive Avalanche Rated D Fast Switching D Ease of Paralleling D Simple Drive Requirements Absolute Maximum Ratings: Continuous Drain Current (VGS = 10V), ID TC = +25°C .

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11A TC = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.8A Pulsed Drain Current (Note 1), IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44A Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125W Derate Linearly Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W/°C Gate­to­Source Voltage, VGS . . . . . . . . . . . .

Specifications:

• Continuous Drain Current Id: 11 A
• Drain Source Voltage Vds: 200 V
• On Resistance Rds(on): 500 MOhm
• Rds(on) Test Voltage Vgs: 20 V
• Threshold Voltage Vgs Typ: 4 V
• Transistor Polarity: P Channel

RoHS: Yes