Datasheet IXTK120N25P - IXYS MOSFET, N, TO-264 — Datenblatt

Detaillierte Beschreibung

Manufacturer: IXYS

Description: MOSFET, N, TO-264

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Docket:
PolarHTTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTK 120N25P
VDSS = 250 V ID25 = 120 A RDS(on) 24 m
Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight

Specifications:

• Capacitance Ciss Typ: 8000 pF
• Continuous Drain Current Id: 120 A
• Current Id Max: 120 A
• Drain Source Voltage Vds: 250 V
• Junction to Case Thermal Resistance A: 0.18°C/W
• Mounting Type: Through Hole
• N-channel Gate Charge: 185nC
• Number of Pins: 3
• On State Resistance: 24 MOhm
• Operating Temperature Range: -55°C to +175°C
• Package / Case: TO-264
• Power Dissipation Pd: 700 W
• Rds(on) Test Voltage Vgs: 10 V
• Reverse Recovery Time trr Max: 200 ns
• Threshold Voltage Vgs Typ: 5 V
• Transistor Case Style: TO-264
• Transistor Polarity: N Channel
• Voltage Vds Typ: 250 V
• Voltage Vgs Max: 20 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

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