Datasheet IXFT36N60P - IXYS MOSFET, N, TO-268 — Datenblatt

Detaillierte Beschreibung

Manufacturer: IXYS

Description: MOSFET, N, TO-268

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Docket:
PolarHVTM HiPerFET Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFH 36N60P IXFK 36N60P IXFT 36N60P
VDSS = 600 V ID25 = 36 A RDS(on) 190 m trr 200 ns
Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg Md Weight

Specifications:

• Capacitance Ciss Typ: 5800 pF
• Continuous Drain Current Id: 36 A
• Current Id Max: 36 A
• Drain Source Voltage Vds: 600 V
• Junction to Case Thermal Resistance A: 0.19°C/W
• Mounting Type: SMD
• N-channel Gate Charge: 102nC
• Number of Pins: 3
• On State Resistance: 190 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: TO-268
• Power Dissipation Pd: 650 W
• Rds(on) Test Voltage Vgs: 10 V
• Reverse Recovery Time trr Max: 200 ns
• Threshold Voltage Vgs Typ: 5 V
• Transistor Case Style: TO-268
• Transistor Polarity: N Channel
• Voltage Vds Typ: 600 V
• Voltage Vgs Max: 30 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

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