Datasheet IXFR140N20P - IXYS MOSFET, N, ISOPLUS247 — Datenblatt

IXYS IXFR140N20P

Part Number: IXFR140N20P

Detaillierte Beschreibung

Manufacturer: IXYS

Description: MOSFET, N, ISOPLUS247

Docket:
PolarHTTM HiPerFET IXFR 140N20P Power MOSFET
ISOPLUS247TM
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated
Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Md Weight Symbol Test Conditions (TJ = 25° C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 150° C 17 1.6 mm (0.062 in.) from case for 10 s 50/60 Hz, RMS, 1 minute Terminal torque Mounting torque Test Conditions TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 M Continuous Transient TC = 25° C External lead current limit TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C TC = 25° C IS IDM, di/dt 100 A/µs, VDD VDSS, TJ 150° C, RG = 4 TC = 25° C Maximum Ratings 200 200 ±20 ±30 90 75 280 60 100 4 10 300 -55 ...

+175 175 -55 ... +150 300 2500 V V V V A A A A mJ J V/ns W °C °C °C °C V~

Specifications:

Capacitance Ciss Typ: 7500 pF
Continuous Drain Current Id: 90 A
Current Id Max: 90 A
Drain Source Voltage Vds: 200 V
Isolation Voltage: 2.5 kV
Mounting Type: Through Hole
N-channel Gate Charge: 240nC
Number of Pins: 3
On State Resistance: 22 MOhm
Operating Temperature Range: -55°C to +175°C
Package / Case: ISOPLUS-247
Power Dissipation Pd: 300 W
Rds(on) Test Voltage Vgs: 10 V
Reverse Recovery Time trr Max: 200 ns
Rth: 0.5
Threshold Voltage Vgs Typ: 5 V
Transistor Case Style: ISOPLUS-247
Transistor Polarity: N Channel
Voltage Vds Typ: 200 V
Voltage Vgs Max: 20 V
Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

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