Datasheet IXFN170N10 - IXYS MOSFET, N, SOT-227B — Datenblatt
Part Number: IXFN170N10
Detaillierte Beschreibung
Manufacturer: IXYS
Description: MOSFET, N, SOT-227B
Docket:
HiPerFETTM Power MOSFET
Single MOSFET Die
Preliminary data
Symbol Test Conditions
VDSS
Specifications:
- Continuous Drain Current Id: 170 A
- Current Id Max: 170 A
- Current Temperature: 25°C
- Drain Source Voltage Vds: 100 V
- Full Power Rating Temperature: 25°C
- Mounting Type: Screw
- Number of Pins: 3
- Number of Transistors: 1
- On State Resistance Max: 10 MOhm
- On State Resistance: 10 MOhm
- Operating Temperature Range: -55°C to +150°C
- Package / Case: ISOTOP
- Power Dissipation Pd: 600 W
- Pulse Current Idm: 680 A
- Rds(on) Test Voltage Vgs: 10 V
- Threshold Voltage Vgs Typ: 4 V
- Transistor Case Style: ISOTOP
- Transistor Polarity: N Channel
- Voltage Vds Typ: 100 V
- Voltage Vgs Max: 20 V
- Voltage Vgs Rds on Measurement: 10 V
- Voltage Vgs th Max: 4 V
RoHS: Yes
Accessories:
- Panasonic - EYGA121807A
- SCHRODER - 20900