Datasheet IXFK30N100Q2 - IXYS MOSFET, N, TO-264 — Datenblatt

Detaillierte Beschreibung

Manufacturer: IXYS

Description: MOSFET, N, TO-264

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Docket:
HiPerFETTM Power MOSFETs
Q-Class
IXFK 30N100Q2 IXFX 30N100Q2
VDSS = 1000 V = 30 A ID25 RDS(on) = 0.40 trr 300 ns
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Low intrinsic Rg, low trr

Specifications:

• Avalanche Single Pulse Energy Eas: 4J
• Continuous Drain Current Id: 30 A
• Current Id Max: 30 A
• Current Temperature: 25°C
• Drain Source Voltage Vds: 1 kV
• Full Power Rating Temperature: 25°C
• Junction Temperature Tj Max: 150°C
• Junction Temperature Tj Min: -55°C
• Mounting Type: Through Hole
• N-channel Gate Charge: 186nC
• Number of Pins: 3
• Number of Transistors: 1
• On State Resistance Max: 400 MOhm
• On State Resistance: 400 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: TO-264
• Power Dissipation Pd: 735 W
• Pulse Current Idm: 120 A
• Rate of Voltage Change dv / dt: 20V/ns
• Rds(on) Test Voltage Vgs: 10 V
• Repetitive Avalanche Energy Max: 60mJ
• Reverse Recovery Time trr Typ: 250 ns
• Threshold Voltage Vgs Typ: 5 V
• Transistor Case Style: TO-264
• Transistor Polarity: N Channel
• Transistor Type: MOSFET
• Voltage Vds Typ: 1 kV
• Voltage Vgs Max: 30 V
• Voltage Vgs Rds on Measurement: 10 V
• Voltage Vgs th Max: 5 V
• Weight: 0.00001kg

RoHS: Yes

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