Datasheet IXFK180N15P - IXYS MOSFET, N, TO-264 — Datenblatt
Part Number: IXFK180N15P
Detaillierte Beschreibung
Manufacturer: IXYS
Description: MOSFET, N, TO-264
Docket:
PolarTM HiPerFET Power MOSFET
N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated
Symbol VDSS VDGR VDS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Fc Weight Test Conditions
IXFK 180N15P IXFX 180N15P
VDSS = 150 V ID25 = 180 A RDS(on) 11 m trr 200 ns
Specifications:
- Capacitance Ciss Typ: 7000 pF
- Continuous Drain Current Id: 180 A
- Current Id Max: 180 A
- Drain Source Voltage Vds: 150 V
- Junction to Case Thermal Resistance A: 0.18°C/W
- Mounting Type: Through Hole
- N-channel Gate Charge: 240nC
- Number of Pins: 3
- On State Resistance: 11 MOhm
- Operating Temperature Range: -55°C to +175°C
- Package / Case: TO-264
- Power Dissipation Pd: 830 W
- Rds(on) Test Voltage Vgs: 10 V
- Reverse Recovery Time trr Max: 200 ns
- Threshold Voltage Vgs Typ: 5 V
- Transistor Case Style: TO-264
- Transistor Polarity: N Channel
- Voltage Vds Typ: 150 V
- Voltage Vgs Max: 20 V
- Voltage Vgs Rds on Measurement: 10 V
RoHS: Yes
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