Datasheet IXFK140N30P - IXYS MOSFET, N, TO-264 — Datenblatt
Part Number: IXFK140N30P
Detaillierte Beschreibung
Manufacturer: IXYS
Description: MOSFET, N, TO-264
Docket:
PolarHVTM HiPerFET IXFK 140N30P IXFX 140N30P Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
VDSS ID25 trr
RDS(on)
= =
Specifications:
- Capacitance Ciss Typ: 14000 pF
- Continuous Drain Current Id: 140 A
- Current Id Max: 140 A
- Drain Source Voltage Vds: 300 V
- Junction to Case Thermal Resistance A: 0.12°C/W
- Mounting Type: Through Hole
- N-channel Gate Charge: 185nC
- Number of Pins: 3
- On State Resistance: 24 MOhm
- Operating Temperature Range: -55°C to +150°C
- Package / Case: TO-264
- Power Dissipation Pd: 1.04 kW
- Rds(on) Test Voltage Vgs: 10 V
- Reverse Recovery Time trr Max: 200 ns
- Threshold Voltage Vgs Typ: 5 V
- Transistor Case Style: TO-264
- Transistor Polarity: N Channel
- Voltage Vds Typ: 300 V
- Voltage Vgs Max: 20 V
- Voltage Vgs Rds on Measurement: 10 V
RoHS: Yes
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