Datasheet IXFH24N80P - IXYS MOSFET, N, TO-247 — Datenblatt

Detaillierte Beschreibung

Manufacturer: IXYS

Description: MOSFET, N, TO-247

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Docket:
PolarHVTM HiPerFET Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFH 24N80P IXFK 24N80P IXFT 24N80P
VDSS = 800 V ID25 = 24 A RDS(on) 400 m trr 250 ns
Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg Md Weight

Specifications:

• Capacitance Ciss Typ: 5800 pF
• Continuous Drain Current Id: 24 A
• Current Id Max: 24 A
• Drain Source Voltage Vds: 800 V
• Junction to Case Thermal Resistance A: 0.19°C/W
• Mounting Type: Through Hole
• N-channel Gate Charge: 100nC
• Number of Pins: 3
• On State Resistance: 400 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: TO-247
• Power Dissipation Pd: 650 W
• Rds(on) Test Voltage Vgs: 10 V
• Reverse Recovery Time trr Max: 250 ns
• Threshold Voltage Vgs Typ: 5 V
• Transistor Case Style: TO-247
• Transistor Polarity: N Channel
• Voltage Vds Typ: 800 V
• Voltage Vgs Max: 30 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

Accessories:

• Dow Corning - 2265931
• Fischer Elektronik - FK 243 MI 247 O
• Fischer Elektronik - WLK 5