Datasheet IXFH12N100Q - IXYS MOSFET, N, TO-247 — Datenblatt

Detaillierte Beschreibung

Manufacturer: IXYS

Description: MOSFET, N, TO-247

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Docket:
HiPerFETTM Power MOSFETs Q Class
N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt
VDSS IXFH/IXFT12N100Q IXFH/IXFT10N100Q
ID25
RDS(on)

Specifications:

• Continuous Drain Current Id: 12 A
• Current Id Max: 12 A
• Current Temperature: 25°C
• Drain Source Voltage Vds: 1 kV
• Full Power Rating Temperature: 25°C
• Junction Temperature Tj Max: 150°C
• Junction Temperature Tj Min: -55°C
• Mounting Type: Through Hole
• N-channel Gate Charge: 90nC
• Number of Pins: 3
• Number of Transistors: 1
• On State Resistance Max: 1.05 Ohm
• On State Resistance: 1.05 Ohm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: TO-247
• Power Dissipation Pd: 300 W
• Pulse Current Idm: 48 A
• Rate of Voltage Change dv / dt: 5V/ns
• Rds(on) Test Voltage Vgs: 10 V
• Repetitive Avalanche Energy Max: 30mJ
• Threshold Voltage Vgs Typ: 5.5 V
• Transistor Case Style: TO-247
• Transistor Polarity: N Channel
• Transistor Type: MOSFET
• Voltage Vds Typ: 1 kV
• Voltage Vgs Max: 20 V
• Voltage Vgs Rds on Measurement: 10 V
• Voltage Vgs th Max: 5.5 V
• Weight: 6 g

RoHS: Yes

Accessories:

• Fischer Elektronik - FK 243 MI 247 H
• Fischer Elektronik - FK 243 MI 247 O
• Fischer Elektronik - SK 145/25 STS-220
• Fischer Elektronik - WLK 5