Datasheet VS-FB180SA10P - International Rectifier MOSFET, N — Datenblatt

Detaillierte Beschreibung

Manufacturer: International Rectifier

Description: MOSFET, N

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Docket:
FB180SA10P
Vishay Semiconductors
Power MOSFET, 180 A
FEATURES
· Fully isolated package · Easy to use and parallel · Very low on-resistance · Dynamic dV/dt rating · Fully avalanche rated

Specifications:

• Continuous Drain Current Id: 180 A
• Current Id Max: 180 A
• Drain Source Voltage Vds: 100 V
• Mounting Type: Screw
• Number of Pins: 4
• On State Resistance: 6.5 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SOT-227
• Power Dissipation Pd: 480 W
• Rds(on) Test Voltage Vgs: 10 V
• SVHC: No SVHC (15-Dec-2010)
• Transistor Case Style: SOT-227
• Transistor Polarity: N Channel
• Voltage Vds Typ: 100 V
• Voltage Vgs Max: 20 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

Andere Namen:

VSFB180SA10P, VS FB180SA10P