Datasheet IRF7807VD2PBF - International Rectifier MOSFET, N, FETKY, SO-8 — Datenblatt

Detaillierte Beschreibung

Manufacturer: International Rectifier

Description: MOSFET, N, FETKY, SO-8

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Docket:
PD-95291
IRF7807VD2PbF
· Co-Pack N-channel HEXFET® Power MOSFET and Schottky Diode · Ideal for Synchronous Rectifiers in DC-DC Converters Up to 5A Output · Low Conduction Losses · Low Switching Losses · Low Vf Schottky Rectifier · Lead-Free
FETKY MOSFET / SCHOTTKY DIODE
A/S A/S A/S G

Simulation Model

Specifications:

• Continuous Drain Current Id: 8.3 A
• Current Id Max: 66 A
• Current Temperature: 25°C
• Drain Source Voltage Vds: 30 V
• Forward Current If(AV): 3.7 A
• Forward Voltage VF Max: 0.54 V
• Full Power Rating Temperature: 25°C
• Mounting Type: SMD
• Number of Pins: 8
• Number of Transistors: 1
• On Resistance Rds(on): 17 MOhm
• Package / Case: SOIC
• Power Dissipation Pd: 2.5 W
• Pulse Current Idm: 66 A
• Rds(on) Test Voltage Vgs: 4.5 V
• SMD Marking: 807VD2
• SVHC: No SVHC (15-Dec-2010)
• Threshold Voltage Vgs Typ: 1 V
• Transistor Case Style: SOIC
• Transistor Polarity: N Channel
• Voltage Vds Typ: 30 V
• Voltage Vgs Max: 1 V
• Voltage Vgs Rds on Measurement: 4.5 V
• Voltage Vgs th Max: 1.2 V
• Voltage Vgs th Min: 1 V

RoHS: Yes

Accessories:

• Dow Corning - 2265931
• Fischer Elektronik - ICK SMD A 5 SA
• Fischer Elektronik - WLK 5
• Roth Elektronik - RE932-01