Datasheet IRFL024NPBF - International Rectifier MOSFET, N, 55 V, 4 A, SOT-223 — Datenblatt

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Manufacturer: International Rectifier

Description: MOSFET, N, 55 V, 4 A, SOT-223

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Docket:
PD - 91861A
IRFL024N
HEXFET® Power MOSFET
l l l l l l
Surface Mount Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating Fast Switching Fully Avalanche Rated

Specifications:

• Continuous Drain Current Id: 4 A
• Current Id Max: 2.8 A
• Current Temperature: 25°C
• Drain Source Voltage Vds: 55 V
• Full Power Rating Temperature: 25°C
• Junction to Case Thermal Resistance A: 60°C/W
• Mounting Type: SMD
• Number of Pins: 3
• Number of Transistors: 1
• On Resistance Rds(on): 75 MOhm
• Package / Case: SOT-223
• Power Dissipation Pd: 2.1 W
• Pulse Current Idm: 11.2 A
• Rds(on) Test Voltage Vgs: 10 V
• SMD Marking: FL024N
• SVHC: No SVHC (15-Dec-2010)
• Threshold Voltage Vgs Typ: 4 V
• Transistor Case Style: SOT-223
• Transistor Polarity: N Channel
• Voltage Vds Typ: 55 V
• Voltage Vgs Max: 4 V
• Voltage Vgs Rds on Measurement: 10 V
• Voltage Vgs th Max: 4 V

RoHS: Y-Ex

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