Datasheet IRF7416QPBF - International Rectifier MOSFET, P SO-8 — Datenblatt

Detaillierte Beschreibung

Manufacturer: International Rectifier

Description: MOSFET, P SO-8

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Docket:
PD - 96124
IRF7416QPbF
HEXFET® Power MOSFET
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Advanced Process Technology Ultra Low On-Resistance P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Automotive [Q101] Qualified Lead-Free

Specifications:

• Charge Qrr @ Tj = 25В°C Typ: 61nC
• Continuous Drain Current Id: 10 A
• Current Id Max: -10 A
• Drain Source Voltage Vds: 30 V
• Mounting Type: SMD
• On Resistance Rds(on): 20 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SOIC
• Power Dissipation Pd: 2.5 W
• Pulse Current Idm: 45 A
• Rds(on) Test Voltage Vgs: -10 V
• SVHC: No SVHC (15-Dec-2010)
• Threshold Voltage Vgs Typ: 1 V
• Transistor Case Style: SOIC
• Transistor Polarity: P Channel
• Voltage Vds Typ: 30 V
• Voltage Vds: 30 V
• Voltage Vgs Max: -20 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

Accessories:

• BONKOTE - BON102
• Electrolube - SMA10SL
• Roth Elektronik - RE932-01