Datasheet IRFH5250TR2PBF - International Rectifier MOSFET, N CH, 25 V, 100 A, PQFN — Datenblatt

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Manufacturer: International Rectifier

Description: MOSFET, N CH, 25 V, 100 A, PQFN

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Docket:
PD -96265
IRFH5250PbF
HEXFET® Power MOSFET
VDS RDS(on) max
(@VGS = 10V)

Specifications:

• Continuous Drain Current Id: 100 A
• Current Id Max: 100 A
• Drain Source Voltage Vds: 25 V
• Mounting Type: SMD
• Number of Pins: 8
• On Resistance Rds(on): 900µ Ohm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: QFN
• Power Dissipation: 3.6 W
• Rds(on) Test Voltage Vgs: 10 V
• SVHC: No SVHC (19-Dec-2011)
• Threshold Voltage Vgs Typ: 1.8 V
• Transistor Case Style: QFN
• Transistor Polarity: N Channel
• Transistor Type: Power MOSFET
• Voltage Vds Typ: 25 V
• Voltage Vgs Max: 1.8 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes