Datasheet IRFH5220TR2PBF - International Rectifier MOSFET, W DIO, N CH, 200 V, 3.8 A, PQFN56 — Datenblatt

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Manufacturer: International Rectifier

Description: MOSFET, W DIO, N CH, 200 V, 3.8 A, PQFN56

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Docket:
PD -97615
IRFH5220PbF
HEXFET® Power MOSFET VDS RDS(on) max
(@VGS = 10V)
200 99.9 20 2.3 20

Specifications:

• Continuous Drain Current Id: 5.8 A
• Drain Source Voltage Vds: 200 V
• Number of Pins: 8
• On Resistance Rds(on): 0.08 Ohm
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation Pd: 3.6 W
• Rds(on) Test Voltage Vgs: 10 V
• Transistor Case Style: PQFN
• Transistor Polarity: N Channel
• Voltage Vgs Max: 20 V

RoHS: Yes

Accessories:

• International Rectifier - IR2101PBF