Datasheet IRF9952PBF - International Rectifier MOSFET, DUAL, NP, LOGIC, SO-8 — Datenblatt

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Manufacturer: International Rectifier

Description: MOSFET, DUAL, NP, LOGIC, SO-8

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Docket:
PD - 95135
IRF9952PbF
l l l l l l l
Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fully Avalanche Rated Lead-Free
HEXFET® Power MOSFET

Specifications:

• Cont Current Id N Channel 2: 3.5 A
• Cont Current Id P Channel: 2.3 A
• Continuous Drain Current Id: 3.5 A
• Current Id Max: 3.5 A
• Current Temperature: 25°C
• Drain Source Voltage Vds: 30 V
• External Depth: 5.2 mm
• External Length / Height: 1.75 mm
• External Width: 4.05 mm
• Full Power Rating Temperature: 25°C
• Junction Temperature Tj Max: 150°C
• Junction Temperature Tj Min: -55°C
• Mounting Type: SMD
• Number of Pins: 8
• Number of Transistors: 2
• On Resistance Rds(on): 100 MOhm
• On State Resistance N Channel Max: 100 MOhm
• On State Resistance P Channel Max: 250 MOhm
• Package / Case: SOIC
• Pin Configuration: b
• Pin Format: 1 S1
• Power Dissipation P Channel 2: 2 W
• Power Dissipation Pd: 2 W
• Pulse Current Idm N Channel 2: 16 A
• Pulse Current Idm P Channel: 10 A
• Pulse Current Idm: 16 A
• Rds(on) Test Voltage Vgs: 10 V
• Row Pitch: 6.3 mm
• SMD Marking: F9952
• SVHC: No SVHC (15-Dec-2010)
• Transistor Case Style: SOIC
• Transistor Polarity: N and P Channel
• Voltage Vgs Max: 1 V

RoHS: Yes

Accessories:

• Dow Corning - 2265931
• Fischer Elektronik - ICK SMD A 5 SA
• Fischer Elektronik - WLK 5
• Roth Elektronik - RE932-01