Datasheet IRF8113PBF - International Rectifier MOSFET, N, LOGIC, SO-8 — Datenblatt

Detaillierte Beschreibung

Manufacturer: International Rectifier

Description: MOSFET, N, LOGIC, SO-8

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Docket:
PD - 95138B
IRF8113PbF
HEXFET® Power MOSFET
Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems Benefits l Very Low RDS(on) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current l 100% Tested for RG l Lead-Free
VDSS

Simulation Model

Specifications:

• Continuous Drain Current Id: 17.2 A
• Current Id Max: 17.2 A
• Current Temperature: 25°C
• Drain Source Voltage Vds: 30 V
• External Depth: 5.2 mm
• External Length / Height: 1.75 mm
• External Width: 4.05 mm
• Full Power Rating Temperature: 25°C
• Mounting Type: SMD
• Number of Pins: 8
• Number of Transistors: 1
• On Resistance Rds(on): 5.6 MOhm
• Package / Case: SOIC
• Pin Format: 1 s
• Power Dissipation Pd: 2.5 W
• Pulse Current Idm: 135 A
• Rds(on) Test Voltage Vgs: 10 V
• Row Pitch: 6.3 mm
• SMD Marking: IRF8113PBF
• SVHC: No SVHC (15-Dec-2010)
• Threshold Voltage Vgs Typ: 2.2 V
• Transistor Case Style: SOIC
• Transistor Polarity: N Channel
• Voltage Vds Typ: 30 V
• Voltage Vgs Max: 2.2 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

Accessories:

• Dow Corning - 2265931
• Fischer Elektronik - ICK SMD A 5 SA
• Fischer Elektronik - WLK 5
• Roth Elektronik - RE932-01