Datasheet IRF8010LPBF - International Rectifier MOSFET, N, 100 V, TO-262 — Datenblatt

International Rectifier IRF8010LPBF

Part Number: IRF8010LPBF

Detaillierte Beschreibung

Manufacturer: International Rectifier

Description: MOSFET, N, 100 V, TO-262

Docket:
PD - 94573
SMPS MOSFET
Applications l High frequency DC-DC converters l UPS and Motor Control Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App.

Note AN1001) l Fully Characterized Avalanche Voltage and Current l Typical RDS(on) = 12m
l
HEXFET® Power MOSFET

Simulation Model

Specifications:

Cont Current Id @ 100В°C: 57 A
Cont Current Id @ 25В°C: 80 A
Continuous Drain Current Id: 80 A
Current Id Max: 80 A
Drain Source Voltage Vds: 100 V
Mounting Type: Through Hole
Number of Pins: 3
On Resistance Rds(on): 15 Ohm
Package / Case: TO-262
Power Dissipation Pd: 260 W
Power Dissipation Ptot Max: 260 W
Pulse Current Idm: 320 A
Rds(on) Test Voltage Vgs: 10 V
Rth: 0.57
SVHC: No SVHC (15-Dec-2010)
Threshold Voltage Vgs Typ: 4 V
Transistor Case Style: TO-262
Transistor Polarity: N Channel
Voltage Vds Typ: 100 V
Voltage Vds: 100 V
Voltage Vgs Max: 4 V
Voltage Vgs Rds on Measurement: 10 V
Voltage Vgs th Max: 4 V
Voltage Vgs th Min: 2 V

RoHS: Y-Ex