Datasheet IRF7910PBF - International Rectifier MOSFET, DUAL, NN, SO-8 — Datenblatt

Detaillierte Beschreibung

Manufacturer: International Rectifier

Description: MOSFET, DUAL, NN, SO-8

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Docket:
PD - 95336A
IRF7910PbF
Applications
l
HEXFET® Power MOSFET VDSS

Simulation Model

Specifications:

• Continuous Drain Current Id: 10 A
• Current Id Max: 10 A
• Drain Source Voltage Vds: 12 V
• Fall Time tf: 6.3 ns
• Mounting Type: SMD
• Number of Pins: 8
• Number of Transistors: 2
• On Resistance Rds(on): 15 MOhm
• Package / Case: SOIC
• Pin Configuration: 1S1, 2G1, 3S2, 4G2, (5&6)D2, (8&7)D1
• Power Dissipation Pd: 2 W
• Pulse Current Idm: 79 A
• Rds(on) Test Voltage Vgs: 4.5 V
• Rise Time: 22 ns
• SVHC: No SVHC (15-Dec-2010)
• Threshold Voltage Vgs Typ: 2 V
• Transistor Case Style: SOIC
• Transistor Polarity: N Channel
• Voltage Vds Typ: 12 V
• Voltage Vgs Max: 12 V
• Voltage Vgs Rds on Measurement: 4.5 V

RoHS: Yes

Accessories:

• Dow Corning - 2265931
• Fischer Elektronik - ICK SMD A 5 SA
• Fischer Elektronik - WLK 5
• Roth Elektronik - RE932-01