Datasheet IRF7811WPBF - International Rectifier MOSFET, N, SO-8 — Datenblatt

Detaillierte Beschreibung

Manufacturer: International Rectifier

Description: MOSFET, N, SO-8

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Docket:
PD- 95023C
IRF7811WPbF
HEXFET® Power MOSFET for DC-DC Converters
· · · · · · N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses 100% Tested for Rg Lead-Free
S S S

Simulation Model

Specifications:

• Continuous Drain Current Id: 14 A
• Current Id Max: 14 A
• Drain Source Voltage Vds: 30 V
• External Length / Height: 1.75 mm
• External Width: 4.05 mm
• Mounting Type: SMD
• Number of Pins: 8
• On Resistance Rds(on): 9 MOhm
• Package / Case: SOIC
• Power Dissipation Pd: 3.1 W
• Pulse Current Idm: 109 A
• Rds(on) Test Voltage Vgs: 4.5 V
• Row Pitch: 6.3 mm
• SMD Marking: F7811W
• SVHC: No SVHC (15-Dec-2010)
• Threshold Voltage Vgs Typ: 1 V
• Transistor Case Style: SOIC
• Transistor Polarity: N Channel
• Voltage Vds Typ: 30 V
• Voltage Vgs Max: 1 V
• Voltage Vgs Rds on Measurement: 4.5 V

RoHS: Yes

Accessories:

• Dow Corning - 2265931
• Fischer Elektronik - ICK SMD A 5 SA
• Fischer Elektronik - WLK 5
• Roth Elektronik - RE932-01