Datasheet IRF7811AVPBF - International Rectifier MOSFET, N, LOGIC, SO-8 — Datenblatt

Detaillierte Beschreibung

Manufacturer: International Rectifier

Description: MOSFET, N, LOGIC, SO-8

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Docket:
PD-95265 IRF7811AVPbF IRF7811AVPbF
· · · · · N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses Minimizes Parallel MOSFETs for high current applications · 100% RG Tested · Lead-Free Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge.

The reduced conduction and switching losses make it ideal for high efficiency DC-DC converters that power the latest generation of microprocessors. The IRF7811AV has been optimized for all parameters that are critical in synchronous buck converters including RDS(on), gate charge and Cdv/dt-induced turn-on immunity. The IRF7811AV offers an extremely low combination of Qsw & RDS(on) for reduced losses in both control and synchronous FET applications. The package is designed for vapor phase, infra-red, convection, or wave soldering techniques. Power dissipation of greater than 2W is possible in a typi

Simulation Model

Specifications:

• Continuous Drain Current Id: 10.8 A
• Current Id Max: 14 A
• Current Temperature: 25°C
• Drain Source Voltage Vds: 30 V
• External Depth: 5.2 mm
• External Length / Height: 1.75 mm
• External Width: 4.05 mm
• Full Power Rating Temperature: 25°C
• Mounting Type: SMD
• Number of Pins: 8
• Number of Transistors: 1
• On Resistance Rds(on): 11 MOhm
• Package / Case: SOIC
• Pin Format: 1 s
• Power Dissipation Pd: 2.5 W
• Pulse Current Idm: 10.8 A
• Rds(on) Test Voltage Vgs: 4.5 V
• Row Pitch: 6.3 mm
• SMD Marking: IRF7811AVPBF
• SVHC: No SVHC (15-Dec-2010)
• Threshold Voltage Vgs Typ: 3 V
• Transistor Case Style: SOIC
• Transistor Polarity: N Channel
• Voltage Vds Typ: 30 V
• Voltage Vgs Max: 3 V
• Voltage Vgs Rds on Measurement: 4.5 V

RoHS: Yes

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