Datasheet IRF7476PBF - International Rectifier MOSFET, N, 12 V, SO-8 — Datenblatt

Detaillierte Beschreibung

Manufacturer: International Rectifier

Description: MOSFET, N, 12 V, SO-8

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Docket:
PD - 94311
IRF7476
HEXFET® Power MOSFET
Applications l High Frequency 3.3V and 5V input Pointof-Load Synchronous Buck Converters for Netcom and Computing Applications.

l Power Management for Netcom, Computing and Portable Applications. Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) l Fully Characterized Avalanche Voltage and Current
VDSS

Simulation Model

Specifications:

• Cont Current Id @ 25В°C: 15 A
• Cont Current Id @ 70В°C: 12
• Continuous Drain Current Id: 15 A
• Current Id Max: 15 A
• Drain Source Voltage Vds: 12 V
• Mounting Type: SMD
• Number of Pins: 8
• On Resistance Rds(on): 8 Ohm
• Package / Case: SOIC
• Power Dissipation Pd: 2.5 W
• Pulse Current Idm: 120 A
• Rds(on) Test Voltage Vgs: 4.5 V
• Rth: 50
• SVHC: No SVHC (15-Dec-2010)
• Threshold Voltage Vgs Typ: 1.9 V
• Transistor Case Style: SOIC
• Transistor Polarity: N Channel
• Voltage Vds Typ: 12 V
• Voltage Vds: 12 V
• Voltage Vgs Max: 1.9 V
• Voltage Vgs Rds on Measurement: 4.5 V

RoHS: Yes