Datasheet IRF7473.PBF - International Rectifier MOSFET, N, SO-8 — Datenblatt

Detaillierte Beschreibung

Manufacturer: International Rectifier

Description: MOSFET, N, SO-8

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Docket:
PD- 94037B
IRF7473
HEXFET® Power MOSFET
Applications l Telecom and Data-Com 24 and 48V input DC-DC converters l Motor Control l Uninterrutible Power Supply Benefits l Ultra Low On-Resistance l High Speed Switching l Low Gate Drive Current Due to Improved Gate Charge Characteristic l Improved Avalanche Ruggedness and Dynamic dv/dt l Fully Characterized Avalanche Voltage and Current Typical SMPS Topologies l Full and Half Bridge 48V input Circuit l Forward 24V input Circuit Absolute Maximum Ratings
Parameter

Specifications:

• Continuous Drain Current Id: 6.9 A
• Current Id Max: 6.9 A
• Drain Source Voltage Vds: 100 V
• External Length / Height: 1.75 mm
• External Width: 4.05 mm
• Mounting Type: SMD
• Number of Pins: 8
• On Resistance Rds(on): 26 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SOIC
• Power Dissipation Pd: 2.5 W
• Pulse Current Idm: 55 A
• Rds(on) Test Voltage Vgs: 10 V
• Row Pitch: 6.3 mm
• SMD Marking: F7473
• SVHC: No SVHC (15-Dec-2010)
• Threshold Voltage Vgs Typ: 5.5 V
• Transistor Case Style: SOIC
• Transistor Polarity: N Channel
• Voltage Vds Typ: 100 V
• Voltage Vgs Max: 20 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

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