Datasheet IRF630NSPBF - International Rectifier MOSFET, N, 200 V, 9.5 A, D2-PAK — Datenblatt

International Rectifier IRF630NSPBF

Part Number: IRF630NSPBF

Detaillierte Beschreibung

Manufacturer: International Rectifier

Description: MOSFET, N, 200 V, 9.5 A, D2-PAK

Docket:
PD - 94005B
Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description
l l Fifth Generation HEXFET ® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability

Simulation Model

Specifications:

Alternate Case Style: D2-PAK
Avalanche Single Pulse Energy Eas: 94mJ
Capacitance Ciss Typ: 575 pF
Continuous Drain Current Id: 9.3 A
Current Iar: 9.3 A
Current Id Max: 9.3 A
Current Idss Max: 25 µA
Current Temperature: 25°C
Drain Source Voltage Vds: 200 V
External Depth: 15.49 mm
External Length / Height: 4.69 mm
External Width: 10.16 mm
Fall Time tf: 15 ns
Full Power Rating Temperature: 25°C
Junction Temperature Tj Max: 175°C
Junction Temperature Tj Min: -55°C
Junction to Case Thermal Resistance A: 1.83°C/W
N-channel Gate Charge: 35nC
Number of Pins: 3
Number of Transistors: 1
On Resistance Rds(on): 300 MOhm
On State resistance @ Vgs = 10V: 300 MOhm
Package / Case: D2-PAK
Power Dissipation Pd: 82 W
Power Dissipation on 1 Sq. PCB: 3.8 W
Pulse Current Idm: 37 A
Rds(on) Test Voltage Vgs: 10 V
Repetitive Avalanche Energy Max: 8.2mJ
Reverse Recovery Time trr Typ: 117 ns
SVHC: No SVHC (15-Dec-2010)
Transistor Case Style: D2-PAK
Transistor Polarity: N Channel
Voltage Vgs Max: 4 V

RoHS: Y-Ex

Accessories:

Fischer Elektronik - FK 244 08 D2 PAK
Fischer Elektronik - FK 244 13 D2 PAK
Fischer Elektronik - WLK 5