Datasheet IRF520NSPBF - International Rectifier MOSFET, N, 100 V, 9.5 A, D2-PAK — Datenblatt

International Rectifier IRF520NSPBF

Part Number: IRF520NSPBF

Detaillierte Beschreibung

Manufacturer: International Rectifier

Description: MOSFET, N, 100 V, 9.5 A, D2-PAK

Docket:
PD -91340A
IRF520NS/L
HEXFET® Power MOSFET
l l l l l l
Advanced Process Technology Surface Mount (IRF520NS) Low-profile through-hole (IRF520NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated

Simulation Model

Specifications:

Alternate Case Style: D2-PAK
Avalanche Single Pulse Energy Eas: 91mJ
Capacitance Ciss Typ: 330 pF
Continuous Drain Current Id: 9.7 A
Current Iar: 5.7 A
Current Id Max: 9.7 A
Current Idss Max: 25 µA
Current Temperature: 25°C
Drain Source Voltage Vds: 100 V
External Depth: 15.49 mm
External Length / Height: 4.69 mm
External Width: 10.16 mm
Fall Time tf: 23 ns
Full Power Rating Temperature: 25°C
Junction Temperature Tj Max: 175°C
Junction Temperature Tj Min: -55°C
Junction to Case Thermal Resistance A: 3.1°C/W
N-channel Gate Charge: 25nC
Number of Pins: 3
Number of Transistors: 1
On Resistance Rds(on): 200 MOhm
On State resistance @ Vgs = 10V: 200 MOhm
Package / Case: D2-PAK
Power Dissipation Pd: 48 W
Power Dissipation on 1 Sq.
PCB: 3.8 W
Pulse Current Idm: 38 A
Rds(on) Test Voltage Vgs: 10 V
Repetitive Avalanche Energy Max: 4.8mJ
Reverse Recovery Time trr Typ: 99 ns
SVHC: No SVHC (15-Dec-2010)
Transistor Case Style: D2-PAK
Transistor Polarity: N Channel
Voltage Vgs Max: 4 V

RoHS: Y-Ex

Accessories:

Fischer Elektronik - FK 244 08 D2 PAK
Fischer Elektronik - FK 244 13 D2 PAK
Fischer Elektronik - WLK 5