Datasheet SPB20N60S5 - Infineon MOSFET, N, D2-PAK — Datenblatt

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Manufacturer: Infineon

Description: MOSFET, N, D2-PAK

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Docket:
SPB20N60S5 Cool MOSTM Power Transistor
Feature · New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Ultra low effective capacitances · Improved transconductance
VDS RDS(on) ID
600 0.19 20
PG-TO263

Specifications:

• Continuous Drain Current Id: 20 A
• Current Id Max: 20 A
• Current Temperature: 25°C
• Drain Source Voltage Vds: 600 V
• Full Power Rating Temperature: 25°C
• Mounting Type: SMD
• Number of Pins: 3
• Number of Transistors: 1
• On Resistance Rds(on): 190 MOhm
• On State Resistance Max: 190 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: D2-PAK
• Power Dissipation Pd: 208 W
• Power Dissipation Ptot Max: 208 W
• Pulse Current Idm: 40 A
• Rds(on) Test Voltage Vgs: 10 V
• SMD Marking: 20N60S5
• Threshold Voltage Vgs Typ: 4.5 V
• Transistor Case Style: D2-PAK
• Transistor Polarity: N Channel
• Voltage Vds Typ: 600 V
• Voltage Vgs Max: 20 V
• Voltage Vgs Rds on Measurement: 10 V
• Voltage Vgs th Max: 5.5 V

RoHS: Yes

Accessories:

• Fischer Elektronik - FK 244 08 D2 PAK
• Fischer Elektronik - FK 244 13 D2 PAK
• Fischer Elektronik - WLK 5