Datasheet SPA11N60CFD - Infineon MOSFET, N, TO-220 — Datenblatt

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Manufacturer: Infineon

Description: MOSFET, N, TO-220

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Docket:
SPA11N60CFD
CoolMOSTM Power Transistor
Features · New revolutionary high voltage technology · Intrinsic fast-recovery body diode · Extremely low reverse recovery charge · Ultra low gate charge · Extreme dv /dt rated · High peak current capability · Periodic avalanche rated · Qualified according to JEDEC0) for target applications
Product Summary V DS R DS(on),max I D1) 600 0.44 11 V A
PG-TO220-3-31

Specifications:

• Continuous Drain Current Id: 11 A
• Current Id Max: 11 A
• Drain Source Voltage Vds: 600 V
• Mounting Type: Through Hole
• Number of Pins: 3
• On Resistance Rds(on): 440 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: TO-220
• Power Dissipation Pd: 33 W
• Rds(on) Test Voltage Vgs: 10 V
• Threshold Voltage Vgs Typ: 4 V
• Transistor Case Style: TO-220
• Transistor Polarity: N Channel
• Transistor Type: Power MOSFET
• Voltage Vds Typ: 600 V
• Voltage Vgs Max: 20 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

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