Datasheet IPI60R165CP - Infineon MOSFET, N, TO-262 — Datenblatt

Infineon IPI60R165CP

Part Number: IPI60R165CP

Detaillierte Beschreibung

Manufacturer: Infineon

Description: MOSFET, N, TO-262

Docket:
IPI60R165CP
CoolMOS® Power Transistor
Features · Lowest figure-of-merit R ONxQg · Ultra low gate charge · Extreme dv/dt rated · High peak current capability · Qualified according to JEDEC1) for target applications · Pb-free lead plating; RoHS compliant
Product Summary V DS @ Tj,max R DS(on),max Q g,typ 650 V
0.165 39 nC

Specifications:

Continuous Drain Current Id: 21 A
Current Id Max: 21 A
Drain Source Voltage Vds: 650 V
Mounting Type: Through Hole
Number of Pins: 3
On Resistance Rds(on): 165 MOhm
Operating Temperature Range: -55°C to +150°C
Package / Case: TO-262
Power Dissipation Pd: 192 W
Rds(on) Test Voltage Vgs: 10 V
Threshold Voltage Vgs Typ: 3 V
Transistor Case Style: TO-262
Transistor Polarity: N Channel
Transistor Type: Power MOSFET
Voltage Vds Typ: 650 V
Voltage Vgs Max: 20 V
Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

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