Datasheet IPI50R399CP - Infineon MOSFET, N, TO-262 — Datenblatt

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Manufacturer: Infineon

Description: MOSFET, N, TO-262

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Docket:
IPI50R399CP
CoolMOSTM Power Transistor
Features · Lowest figure of merit RON x Qg · Ultra low gate charge · Extreme dv/dt rated · High peak current capability · Pb-free lead plating; RoHS compliant · Quailfied according to JEDEC1) for target applications
Product Summary V DS @Tjmax R DS(on),max Q g,typ 560 0.399 17 V nC
PG-TO262

Specifications:

• Continuous Drain Current Id: 9 A
• Current Id Max: 9 A
• Drain Source Voltage Vds: 560 V
• Mounting Type: Through Hole
• Number of Pins: 3
• On Resistance Rds(on): 399 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: TO-262
• Power Dissipation Pd: 83 W
• Rds(on) Test Voltage Vgs: 10 V
• Threshold Voltage Vgs Typ: 3 V
• Transistor Case Style: TO-262
• Transistor Polarity: N Channel
• Transistor Type: Power MOSFET
• Voltage Vds Typ: 560 V
• Voltage Vgs Max: 20 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

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