Datasheet IPI50R140CP - Infineon MOSFET, N, TO-262 — Datenblatt

Infineon IPI50R140CP

Part Number: IPI50R140CP

Detaillierte Beschreibung

Manufacturer: Infineon

Description: MOSFET, N, TO-262

Docket:
IPI50R140CP
CoolMOS® Power Transistor
Features · Worldwide best R DS ,on in TO220 · Lowest figure of merit RON x Qg · Ultra low gate charge · Extreme dv/dt rated · High peak current capability · Pb-free lead plating; RoHS compliant · Quailfied according to JEDEC1) for target applications
Product Summary V DS @Tjmax R DS(on),max Q g,typ 550 0.140 48 V nC
TO-262-3-1

Specifications:

Continuous Drain Current Id: 23 A
Current Id Max: 23 A
Drain Source Voltage Vds: 550 V
Mounting Type: Through Hole
Number of Pins: 3
On Resistance Rds(on): 140 MOhm
Operating Temperature Range: -55°C to +150°C
Package / Case: TO-262
Power Dissipation Pd: 192 W
Rds(on) Test Voltage Vgs: 10 V
Threshold Voltage Vgs Typ: 3 V
Transistor Case Style: TO-262
Transistor Polarity: N Channel
Transistor Type: Power MOSFET
Voltage Vds Typ: 550 V
Voltage Vgs Max: 20 V
Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

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