Datasheet IPD90R1K2C3 - Infineon MOSFET, N, TO-252 — Datenblatt

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Manufacturer: Infineon

Description: MOSFET, N, TO-252

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Docket:
IPD90R1K2C3
CoolMOSTM Power Transistor
Features · Lowest figure-of-merit R ON x Qg · Extreme dv/dt rated · High peak current capability · Qualified according to JEDEC1) for target applications · Pb-free lead plating; RoHS compliant · Ultra low gate charge
Product Summary V DS @ T J=25°C R DS(on),max @T J=25°C Q g,typ 900 1.2 28 V nC
PG-TO252

Specifications:

• Continuous Drain Current Id: 5.1 A
• Current Id Max: 5.1 A
• Drain Source Voltage Vds: 900 V
• Mounting Type: SMD
• Number of Pins: 3
• On Resistance Rds(on): 1.2 Ohm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: TO-252
• Power Dissipation: 83 W
• Pulse Current Idm: 10 A
• Rds(on) Test Voltage Vgs: 10 V
• Threshold Voltage Vgs Typ: 3 V
• Transistor Case Style: TO-252
• Transistor Polarity: N Channel
• Transistor Type: Power MOSFET
• Voltage Vds Typ: 900 V
• Voltage Vgs Max: 20 V
• Voltage Vgs Rds on Measurement: 10 V
• RoHS: Yes
• SVHC: No SVHC (19-Dec-2011)