Datasheet IPA50R199CP - Infineon MOSFET, N, TO-220 — Datenblatt

Detaillierte Beschreibung

Manufacturer: Infineon

Description: MOSFET, N, TO-220

Download Data Sheet

Docket:
IPA50R199CP
CoolMOSTM Power Transistor
Features · Lowest figure of merit RON x Qg · Ultra low gate charge · Extreme dv/dt rated · High peak current capability · Pb-free lead plating; RoHS compliant · Quailfied according to JEDEC for target applications
0)
Product Summary V DS @Tjmax R DS(on),max Q g,typ 550 0.199 34 V nC

Specifications:

• Continuous Drain Current Id: 17 A
• Current Id Max: 17 A
• Drain Source Voltage Vds: 550 V
• Mounting Type: Through Hole
• Number of Pins: 3
• On Resistance Rds(on): 199 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: TO-220
• Power Dissipation Pd: 139 W
• Rds(on) Test Voltage Vgs: 10 V
• Threshold Voltage Vgs Typ: 3 V
• Transistor Case Style: TO-220
• Transistor Polarity: N Channel
• Transistor Type: Power MOSFET
• Voltage Vds Typ: 550 V
• Voltage Vgs Max: 20 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

Accessories:

• Panasonic - EYGA091203SM
• Panasonic - EYGA121807A