Datasheet BSP372L6327 - Infineon MOSFET, N, SOT-223 — Datenblatt

Infineon BSP372L6327

Part Number: BSP372L6327

Detaillierte Beschreibung

Manufacturer: Infineon

Description: MOSFET, N, SOT-223

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Docket:
BSP 372
SIPMOS ® Small-Signal Transistor
· N channel · Enhancement mode · Logic Level · Avalanche rated · VGS(th) = 0.8 ...2.0 V
· Pb-free lead plating; RoHS compliant
Pin 1 G

Specifications:

  • Continuous Drain Current Id: 1.7 A
  • Current Id Max: 1.7 A
  • Current Temperature: 25°C
  • Drain Source Voltage Vds: 100 V
  • External Depth: 7.3 mm
  • External Length / Height: 1.7 mm
  • External Width: 6.7 mm
  • Full Power Rating Temperature: 25°C
  • Junction Temperature Tj Max: 150°C
  • Mounting Type: SMD
  • Number of Pins: 3
  • Number of Transistors: 1
  • On Resistance Rds(on): 310 MOhm
  • Operating Temperature Range: -55°C to +150°C
  • Package / Case: SOT-223
  • Power Dissipation Pd: 1.8 W
  • Power Dissipation Ptot Max: 1.8 W
  • Pulse Current Idm: 6.8 A
  • Rds(on) Test Voltage Vgs: 5 V
  • SMD Marking: BSP 372
  • Tape Width: 12 mm
  • Threshold Voltage Vgs Typ: 1.9 V
  • Transistor Case Style: SOT-223
  • Transistor Polarity: N Channel
  • Voltage Vds Typ: 100 V
  • Voltage Vgs Max: 14 V
  • Voltage Vgs Rds on Measurement: 10 V
  • Voltage Vgs th Max: 2 V

RoHS: Yes

Accessories:

  • LICEFA - V11-7-6-10
  • LICEFA - V11-7
  • Roth Elektronik - RE901