Datasheet BSP372L6327 - Infineon MOSFET, N, SOT-223 — Datenblatt

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Manufacturer: Infineon

Description: MOSFET, N, SOT-223

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Docket:
BSP 372
SIPMOS ® Small-Signal Transistor
· N channel · Enhancement mode · Logic Level · Avalanche rated · VGS(th) = 0.8 ...2.0 V
· Pb-free lead plating; RoHS compliant
Pin 1 G

Specifications:

• Continuous Drain Current Id: 1.7 A
• Current Id Max: 1.7 A
• Current Temperature: 25°C
• Drain Source Voltage Vds: 100 V
• External Depth: 7.3 mm
• External Length / Height: 1.7 mm
• External Width: 6.7 mm
• Full Power Rating Temperature: 25°C
• Junction Temperature Tj Max: 150°C
• Mounting Type: SMD
• Number of Pins: 3
• Number of Transistors: 1
• On Resistance Rds(on): 310 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SOT-223
• Power Dissipation Pd: 1.8 W
• Power Dissipation Ptot Max: 1.8 W
• Pulse Current Idm: 6.8 A
• Rds(on) Test Voltage Vgs: 5 V
• SMD Marking: BSP 372
• Tape Width: 12 mm
• Threshold Voltage Vgs Typ: 1.9 V
• Transistor Case Style: SOT-223
• Transistor Polarity: N Channel
• Voltage Vds Typ: 100 V
• Voltage Vgs Max: 14 V
• Voltage Vgs Rds on Measurement: 10 V
• Voltage Vgs th Max: 2 V

RoHS: Yes

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