Datasheet BSP317PL6327 - Infineon MOSFET, P, LOGIC, SOT-223 — Datenblatt

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Manufacturer: Infineon

Description: MOSFET, P, LOGIC, SOT-223

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Docket:
BSP 317 P SIPMOS Small-Signal-Transistor
Feature · P-Channel · Enhancement mode · Logic Level · dv/dt rated
Drain pin 2/4 Gate pin1 Source pin 3
2 1
VPS05163

Specifications:

• Continuous Drain Current Id: 370 mA
• Current Id Max: -430 mA
• Current Temperature: 25°C
• Drain Source Voltage Vds: 200 V
• External Depth: 7.3 mm
• External Length / Height: 1.7 mm
• External Width: 6.7 mm
• Full Power Rating Temperature: 25°C
• Junction Temperature Tj Max: 150°C
• Mounting Type: SMD
• Number of Pins: 3
• Number of Transistors: 1
• On Resistance Rds(on): 6 Ohm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SOT-223
• Power Dissipation Pd: 1.8 W
• Power Dissipation Ptot Max: 1.8 W
• Pulse Current Idm: 1.4 A
• Rds(on) Test Voltage Vgs: -10 V
• SMD Marking: BSP 317
• Tape Width: 12 mm
• Threshold Voltage Vgs Typ: -1.5 V
• Transistor Case Style: SOT-223
• Transistor Polarity: P Channel
• Voltage Vds Typ: -60 V
• Voltage Vgs Max: -20 V
• Voltage Vgs Rds on Measurement: -10 V
• Voltage Vgs th Max: -2 V

RoHS: Yes