Datasheet BSP299L6327 - Infineon MOSFET, N, LOGIC, REEL 1K — Datenblatt
Part Number: BSP299L6327
Detaillierte Beschreibung
Manufacturer: Infineon
Description: MOSFET, N, LOGIC, REEL 1K
Docket:
BSP 299
SIPMOS ® Small-Signal Transistor · N channel · Enhancement mode · Avalanche rated · VGS(th)= 2.1 ...
4.0 V Pin 1 G Pin 2 D Pin 3 S Pin 4 D
Type BSP 299 Type BSP 299
VDS
500 V
Specifications:
- Continuous Drain Current Id: 400 mA
- Current Id Max: 400 mA
- Current Temperature: 25°C
- Drain Source Voltage Vds: 500 V
- External Depth: 7.3 mm
- External Length / Height: 1.7 mm
- External Width: 6.7 mm
- Full Power Rating Temperature: 25°C
- Mounting Type: SMD
- Number of Pins: 3
- Number of Transistors: 1
- On Resistance Rds(on): 4 Ohm
- Operating Temperature Range: -55°C to +150°C
- Package / Case: SOT-223
- Power Dissipation Max: 1.8 W
- Power Dissipation: 1.8 W
- Pulse Current Idm: 1.6 A
- Rds(on) Test Voltage Vgs: 10 V
- Reel Quantity: 1000
- SMD Marking: BSP 299
- SVHC: No SVHC (20-Jun-2011)
- Tape Width: 12 mm
- Threshold Voltage Vgs Typ: 3 V
- Transistor Case Style: SOT-223
- Transistor Polarity: N Channel
- Voltage Vds Typ: 500 V
- Voltage Vgs Max: 20 V
- Voltage Vgs Rds on Measurement: 10 V
- Voltage Vgs th Max: 4 V
RoHS: Yes