Datasheet BSP298 - Infineon MOSFET, N, SOT-223 — Datenblatt

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Manufacturer: Infineon

Description: MOSFET, N, SOT-223

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Docket:
BSP 298
SIPMOS ® Small-Signal Transistor
· N channel · Enhancement mode · Avalanche rated · VGS(th)= 2.1 ...

4.0 V · Pb-free lead plating; RoHS compliant Pin 1 G Pin 2 D Pin 3 S Pin 4 D
Type
Package

Specifications:

• Continuous Drain Current Id: 500 mA
• Current Id Max: 500 mA
• Current Temperature: 25°C
• Drain Source Voltage Vds: 400 V
• External Depth: 7.3 mm
• External Length / Height: 1.7 mm
• External Width: 6.7 mm
• Full Power Rating Temperature: 25°C
• Junction Temperature Tj Max: 150°C
• Junction Temperature Tj Min: -55°C
• Mounting Type: SMD
• Number of Pins: 3
• Number of Transistors: 1
• On Resistance Rds(on): 3 Ohm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SOT-223
• Power Dissipation Pd: 1.8 W
• Power Dissipation Ptot Max: 1.8 W
• Pulse Current Idm: 2 A
• Rds(on) Test Voltage Vgs: 10 V
• SMD Marking: BSP298
• Tape Width: 12 mm
• Threshold Voltage Vgs Typ: 3 V
• Transistor Case Style: SOT-223
• Transistor Polarity: N Channel
• Voltage Vds Typ: 400 V
• Voltage Vgs Max: 20 V
• Voltage Vgs Rds on Measurement: 10 V
• Voltage Vgs th Max: 4 V

RoHS: Yes