Datasheet BSC016N04LS G - Infineon MOSFET, N CH, 100 A, 40 V, PG-TDSON-8 — Datenblatt

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Manufacturer: Infineon

Description: MOSFET, N CH, 100 A, 40 V, PG-TDSON-8

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Docket:
BSC016N04LS G
OptiMOSTM3 Power-Transistor
Features · Fast switching MOSFET for SMPS · Optimized technology for DC/DC converters · Qualified according to JEDEC1) for target applications · N-channel · Logic level · Excellent gate charge x R DS(on) product (FOM) · Very low on-resistance R DS(on) · Superior thermal resistance · 100% Avalanche tested · Pb-free plating; RoHS compliant; ·Halogen-free according to IEC61249-2-21 Type BSC016N04LS G Package PG-TDSON-8 Marking 016N04LS
Product Summary V DS R DS(on),max ID 40 1.6 100 PG-TDSON-8 V m A
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C V GS=4.5 V, T C=25 °C V GS=4.5 V, T C=100 °C V GS=10 V, T A=25 °C, R thJA=50 K/W 2) Pulsed drain current3) Avalanche current, single pulse 4) Avalanche energy, single pulse Gate source voltage

Specifications:

• Current Id Max: 100 A
• Drain Source Voltage Vds: 40 V
• Number of Pins: 8
• On Resistance Rds(on): 1.3 MOhm
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation Pd: 139 W
• Rds(on) Test Voltage Vgs: 10 V
• Transistor Case Style: PG-TSDSON
• Transistor Polarity: N Channel
• Transistor Type: Power MOSFET
• Voltage Vgs Max: 20 V

RoHS: Yes