Datasheet FDT457N - Fairchild N CHANNEL MOSFET, 30 V, 5 A, SOT-223 — Datenblatt

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Manufacturer: Fairchild

Description: N CHANNEL MOSFET, 30 V, 5 A, SOT-223

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Docket:
August 1998
FDT457N N-Channel Enhancement Mode Field Effect Transistor
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance. These products are well suited to low voltage, low current applications such as notebook computer power management, battery powered circuits, and DC motor control.
Features

Specifications:

• Continuous Drain Current Id: 5 A
• Current Id Max: 16 A
• Current Temperature: 25°C
• Drain Source Voltage Vds: 30 V
• External Depth: 7.3 mm
• External Length / Height: 1.7 mm
• External Width: 6.7 mm
• Full Power Rating Temperature: 25°C
• Mounting Type: SMD
• Number of Pins: 4
• On Resistance Rds(on): 60 MOhm
• Operating Temperature Range: -65°C to +150°C
• Package / Case: SOT-223
• Power Dissipation Pd: 3 W
• Pulse Current Idm: 16 A
• Rds(on) Test Voltage Vgs: 10 V
• SMD Marking: FDT457N
• SVHC: No SVHC (15-Dec-2010)
• Tape Width: 12 mm
• Transistor Case Style: SOT-223
• Transistor Polarity: N Channel
• Voltage Vds: 30 V
• Voltage Vgs Max: 20 V
• Voltage Vgs th Max: 3 V

RoHS: Y-Ex

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