Datasheet FDS6673BZ - Fairchild MOSFET, P CH, 30 V, 14.5 A, 8SOIC — Datenblatt

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Manufacturer: Fairchild

Description: MOSFET, P CH, 30 V, 14.5 A, 8SOIC

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FDS6673BZ P-Channel PowerTrench® MOSFET
March 2009
FDS6673BZ P-Channel PowerTrench® MOSFET
-30V, -14.5A, 7.8m General Description
This P-Channel MOSFET is produced using Fairchild Semiconductor's advanced Power Trench process that has been especially tailored to minimize the on-state resistance.

This device is well suited for Power Management and load switching applications common in Notebook

Specifications:

• Continuous Drain Current Id: -14.5 A
• Drain Source Voltage Vds: -30 V
• MSL: MSL 1 - Unlimited
• Number of Pins: 8
• On Resistance Rds(on): 6.5 MOhm
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation: 1 W
• Rds(on) Test Voltage Vgs: -10 V
• Threshold Voltage Vgs Typ: -1.9 V
• Transistor Case Style: SOIC
• Transistor Polarity: P Channel
• RoHS: Yes
• SVHC: No SVHC (19-Dec-2011)